SEMIX452GAL126HDS ? by semikron rev. 1 ? 17.01.2012 1 semix ? 2s gal trench igbt modules SEMIX452GAL126HDS features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperatur limited to t c =125c max. ?not for new design absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 150 c t c =25c 455 a t c =80c 319 a i cnom 300 a i crm i crm = 2xi cnom 600 a v ges -20 ... 20 v t psc v cc = 600 v v ge 20 v v ces 1200 v t j =125c 10 s t j -40 ... 150 c inverse diode i f t j = 150 c t c =25c 394 a t c =80c 272 a i fnom 300 a i frm i frm = 2xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 1900 a t j -40 ... 150 c freewheeling diode i f t j = 150 c t c =25c 373 a t c =80c 258 a i fnom 300 a i frm i frm = 2xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 1900 a t j -40 ... 150 c module i t(rms) t terminal =80c 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =300a v ge =15v chiplevel t j =25c 1.7 2.1 v t j =125c 2.0 2.45 v v ce0 t j =25c 11.2v t j =125c 0.9 1.1 v r ce v ge =15v t j =25c 2.3 3.0 m ? t j =125c 3.7 4.5 m ? v ge(th) v ge =v ce , i c =12ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =125c ma c ies v ce =25v v ge =0v f=1mhz 21.5 nf c oes f=1mhz 1.13 nf c res f=1mhz 0.98 nf q g v ge = - 8 v...+ 15 v 2400 nc r gint t j =25c 2.50 ?
SEMIX452GAL126HDS 2 rev. 1 ? 17.01.2012 ? by semikron t d(on) v cc = 600 v i c =300a v ge =15v r g on =2 ? r g off =2 ? t j =125c 280 ns t r t j =125c 65 ns e on t j =125c 35 mj t d(off) t j =125c 630 ns t f t j =125c 130 ns e off t j =125c 45 mj r th(j-c) per igbt 0.083 k/w inverse diode v f = v ec i f = 300 a v ge =0v chip t j =25c 1.6 1.80 v t j =125c 1.6 1.8 v v f0 t j =25c 0.9 1 1.1 v t j =125c 0.7 0.8 0.9 v r f t j =25c 1.7 2.0 2.3 m ? t j =125c 2.3 2.7 3.0 m ? i rrm i f = 300 a di/dt off =6200a/s v ge =-15v v cc = 600 v t j =125c 375 a q rr t j =125c 75 c e rr t j =125c 33 mj r th(j-c) per diode 0.15 k/w freewheeling diode v f = v ec i f = 300 a v ge =0v chip t j =25c 1.7 1.91 v t j =125c 1.7 1.9 v v f0 t j =25c 0.9 1 1.1 v t j =125c 0.7 0.8 0.9 v r f t j =25c 1.9 2.3 2.7 m ? t j =125c 2.7 3.1 3.5 m ? i rrm i f = 300 a di/dt off =6200a/s v ge =-15v v cc = 600 v t j =125c 375 a q rr t j =125c 75 c e rr t j =125c 33 mj r th(j-c) per diode 0.15 k/w module l ce 18 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c =125c 1m ? r th(c-s) per module 0.045 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 250 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k characteristics symbol conditions min. typ. max. unit semix ? 2s gal trench igbt modules SEMIX452GAL126HDS features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperatur limited to t c =125c max. ?not for new design
SEMIX452GAL126HDS ? by semikron rev. 1 ? 17.01.2012 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SEMIX452GAL126HDS 4 rev. 1 ? 17.01.2012 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SEMIX452GAL126HDS ? by semikron rev. 1 ? 17.01.2012 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semix 2s spring configuration
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